2002. 12. 11 1/3 semiconductor technical data KTB817 triple diffused pnp transistor revision no : 2 high power amplifier application. features complementary to ktd1047. recommended for 60w audio frequency amplifier output stage. maximum rating (ta=25 ) 1. base 2. collector (heat sink) 3. emitter to-3p(n) c g l k h a d b e f i d p pt m j q 123 a 15.9 max millimeters dim b 4.8 max c 20.0 0.3 d 2.0 0.3 d 1.0+0.3/-0.25 e2.0 f 1.0 g 3.3 max h9.0 i4.5 j 2.0 k 1.8 max l 20.5 0.5 p 5.45 0.2 q 3.2 0.2 t 0.6+0.3/-0.1 2.8 m + _ + _ + _ + _ + _ electrical characteristics (ta=25 ) note : h fe (1) classification o:60 120, y:100 200 characteristic symbol rating unit collector-base voltage v cbo -160 v collector-emitter voltage v ceo -140 v emitter-base voltage v ebo -6 v collector current dc i c -12 a pulse i cp -15 collector power dissipation (tc=25 ) p c 100 w junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-80v, i e =0 - - -0.1 ma emitter cut-off current i ebo v eb =-4v, i c =0 - - -0.1 ma dc current gain h fe (1) (note) v ce =-5v, i c =-1a 60 - 200 h fe 2 v ce =-5v, i c =-6a 20 - collector-emitter saturation voltage v ce(sat) i c =-5a, i b =-0.5a - - -2.5 v base-emitter voltage v be v ce =-5v, i c =-1a - - -1.5 v transition frequency f t v ce =-5v, i c =-1a - 15 - mhz output capacitance c ob v cb =-10v, i e =0, f=1mhz - 300 - pf turn on time t on v cc =-20v i c =1a=10 i b1 =-10 i b2 r l =20 - 0.25 - s fall time t f - 0.53 - storage time t stg - 1.61 -
2002. 12. 11 2/3 KTB817 revision no : 2 0 c base-emitter voltage v (v) i - v collector current i (a) be 0 i - v cce ce collector emitter voltage v (v) 0 c 0 collector current i (a) -2 v - i be(sat) c c collector current i (a) -0.1 -0.3 -3 -1 -0.1 be(sat) base-emitter saturation dc current gain h 1 fe -3 -1 -0.3 -0.1 collector current i (a) c c fe h - i transition frequency f (mhz) 1 t -1 -3 -0.3 -0.1 collector current i (a) c c t f - i -10 -20 -30 -40 -50 -4 -6 -8 -10 -240ma -200ma -160ma -120ma -80ma -40ma -20ma i =0 b collector current i (a) v - i ce(sat) c collector-emitter voltage -0.1 -0.01 -0.3 -1 c -10 -30 -100 3 5 10 30 50 100 300 500 1k v (v) -3 -5 -10 -0.03 -0.05 -0.1 -0.3 -0.5 -1 -3 -5 -10 v =-5v ce i /i =10 c b ce(sat) voltage v (v) -10 -0.3 -0.5 -1 -3 -5 -10 i /i =10 c b be c -0.4 -0.8 -1.2 -1.6 -1 -2 -3 -4 -5 -6 -7 -8 v =-5v ce -10 3 5 10 30 50 100 v =-5v ce
2002. 12. 11 3/3 KTB817 revision no : 2 collector current i (a) c collector-emitter voltage v (v) ce safe operating area collector-base voltage v (v) c (pf) ob cb collector output capacitance -0.1 -30 -10 -3 -1 -1 10 -3 -30 -100 c - v ob cb -10 30 50 100 300 500 1k f=1mhz -100 -300 -1 k -0.3 -0.5 -1 -3 -5 -10 -30 -50 -100 1ms 10ms 100ms dc
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